In situ XPS investigation of the chemical surface composition during the ALD of ultra-thin aluminum oxide films

IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Volumn , Issue , 2011, Pages

  Geidel, Marion ^a   Knaut, Martin ^a   Albert, Matthias ^a   Bartha, Johann W ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

ALD; aluminum oxide; atomic layer deposition; in situ XPS; reaction mechanism; TMA; ultra thin films

Indexed keywords

ALD; ALUMINUM OXIDE; IN SITU XPS; REACTION MECHANISM; TMA;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CHEMISORPTION; CHIP SCALE PACKAGES; DESIGN; GAS ADSORPTION; MONOLAYERS; OXIDES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 82155191893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCD.2011.6068753     Document Type: Conference Paper

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