Monitoring atomic layer deposition processes in situ and in real-time by spectroscopic ellipsometry

IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Volumn , Issue , 2011, Pages

  Junige, Marcel ^a   Geidel, Marion ^a   Knaut, Martin ^a   Albert, Matthias ^a   Bartha, Johann W ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; CRITICAL CHALLENGES; FILM PROPERTIES; GROWTH REGIME; IN-SITU; PROCESS ANALYSIS; SUBSTRATE TEMPERATURE; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CHIP SCALE PACKAGES; ELECTRIC PROPERTIES; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS;

FILM GROWTH;

EID: 82155188575     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCD.2011.6068739     Document Type: Conference Paper

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