X-band rapid-scan EPR of samples with long electron spin relaxation times: A comparison of continuous wave, pulse and rapid-scan EPR

Molecular Physics

Volumn 111, Issue 18-19, 2013, Pages 2664-2673

  Mitchell, Deborah G ^a   Tseitlin, Mark ^a   Quine, Richard W ^b   Meyer, Virginia ^a   Newton, Mark E ^c   Schnegg, Alexander ^d   George, Benjamin ^d   Eaton, Sandra S ^a   Eaton, Gareth R ^a  

^a UNIVERSITY OF DENVER   (United States)

^b University of Denver   (United States)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

hydrogenated silicon; N@C60; rapid scan EPR; single substitutional N in diamond

Indexed keywords

ACQUISITION TIME; CONTINUOUS WAVE; ELECTRON-SPIN RELAXATION; EXPERIMENTAL PARAMETERS; HYDROGENATED SILICON; ORDERS OF MAGNITUDE; ROOM TEMPERATURE; SUBSTITUTIONAL NITROGEN;

HYDROGENATION; MAGNETIC RESONANCE; RELAXATION TIME; SIGNAL TO NOISE RATIO; SILICON;

AMORPHOUS SILICON;

EID: 84885612674     PISSN: 00268976     EISSN: 13623028     Source Type: Journal    
DOI: 10.1080/00268976.2013.792959     Document Type: Article

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