Crystal-facet-dependent metallization in electrolyte-gated rutile TiO 2 single crystals

ACS Nano

Volumn 7, Issue 9, 2013, Pages 8074-8081

  Schladt, Thomas D ^a   Graf, Tanja ^a   Aetukuri, Nagaphani B ^a,b   Li, Mingyang ^a,c   Fantini, Andrea ^a   Jiang, Xin ^a   Samant, Mahesh G ^a   Parkin, Stuart S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b Department of Materials Science and Engineering ^*  (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

crystal facet dependence; disorder induced metal insulator transition; electrolyte gating; metallization; oxygen vacancy formation; titanium dioxide

Indexed keywords

CRYSTAL FACETS; ELECTRIC DOUBLE LAYER; GATE VOLTAGES; LOW TEMPERATURES; RUTILE TIO; VACANCY FORMATION;

ELECTRIC FIELDS; ELECTROLYTES; IONIC LIQUIDS; OXIDE MINERALS; OXYGEN VACANCIES; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM DIOXIDE;

METALLIZING;

EID: 84884926706     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403340d     Document Type: Article

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