Gate control of the electron spin-diffusion length in semiconductor quantum wells

Nature Communications

Volumn 4, Issue , 2013, Pages

  Wang, G ^a   Liu, B L ^a   Balocchi, A ^b   Renucci, P ^b   Zhu, C R ^a   Amand, T ^b   Fontaine, C ^c   Marie, X ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSA   (France)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD; ELECTRON; EXPERIMENTAL STUDY; QUANTUM MECHANICS; SEMICONDUCTOR INDUSTRY;

ARTICLE; DIFFUSION; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON; ELECTRON SPIN RESONANCE; LASER; PHYSICAL PARAMETERS; POLARIZATION; QUANTUM CHEMISTRY; SEMICONDUCTOR; SPECTROSCOPY; SPIN DIFFUSION LENGTH;

EID: 84884677047     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3372     Document Type: Article

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