Electrical suppression of spin relaxation in GaAs(111)b quantum wells

Physical Review Letters

Volumn 109, Issue 26, 2012, Pages

  Hernandez Minguez A ^a   Biermann, K ^a   Hey, R ^a   Santos, P V ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; BULK INVERSION; BULK INVERSION ASYMMETRY; DEPHASING; ELECTRON SPINS; EXPERIMENTAL EVIDENCE; GAAS; PHOTOLUMINESCENCE MEASUREMENTS; SPIN DEPHASING; SPIN LIFETIMES; SPIN ORBIT INTERACTIONS; SPIN RELAXATION; ZINC-BLENDE;

ELECTRIC FIELDS; ELECTROSPINNING; GALLIUM ARSENIDE; MAGNETIC MOMENTS; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84871727695     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.266602     Document Type: Article

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20. See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.109.266602 for bias dependence of the g factor.
21. See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.109.266602 for detailed information about the effect of inhomogeneous field distributions on the measured spin lifetime.