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Chinese Physics Letters
Volumn 30, Issue 9, 2013, Pages
Stress distribution in GaN films grown on patterned Si (111) substrates and its effect on LED performance
Author keywords

[No Author keywords available]
Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SILICON COMPOUNDS; STRESS RELAXATION; TENSILE STRESS;
EID: 84884637804     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/30/9/098101     Document Type: Article
Times cited : (9)
References (22)
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  • 3
    • 27644592789 scopus 로고    scopus 로고
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    • DOI 10.1016/j.jcrysgro.2005.08.046, PII S0022024805009917
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  • 8
    • 0001020897 scopus 로고    scopus 로고
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    • DOI 10.1063/1.1338968
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  • 9
    • 79955983177 scopus 로고    scopus 로고
    • Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
    • DOI 10.1063/1.1432764
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  • 11
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    • DOI 10.1016/j.jlumin.2006.01.084, PII S0022231306000871, Luminescence and Optical Spectroscopy of Condensed Matter Proceedings of the 2005 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter
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    • Xiong, C.1    Jiang, F.2    Fang, W.3    Wang, L.4    Mo, C.5    Liu, H.6

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.