Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Carbon

Volumn 65, Issue , 2013, Pages 349-358

  Pan, Genhua ^a   Li, Bing ^a   Heath, Mark ^a,b   Horsell, David ^b   Wears, M Lesley ^b   Al Taan, Laith ^a   Awan, Shakil ^a,c  

^a UNIVERSITY OF PLYMOUTH   (United Kingdom)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE GROWTH; INSULATOR SUBSTRATES; LAYER DEPOSITION; MASS PRODUCTION; MONOLAYER SURFACE; OPTIMISED CONDITIONS; SELF-LIMITING GROWTHS; SURFACE COVERAGES;

GRAPHENE; MONOLAYERS; NICKEL; RAMAN SCATTERING; RAPID THERMAL PROCESSING;

SUBSTRATES;

EID: 84884534413     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.08.036     Document Type: Article

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