Preparation and characterization of CuInxAl1-xS2 films using the sulfurization of metal precursors for photoelectrochemical applications

Journal of the Taiwan Institute of Chemical Engineers

Volumn 44, Issue 3, 2013, Pages 407-414

  Cheng, Kong Wei ^a   Fan, Miao Syuan ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

CuInxAl1 xS2; Photoelectrode; Thermal evaporation; Water splitting

Indexed keywords

CUINXAL1-XS2; ENERGY DISPERSIVE ANALYSIS; FLAT-BAND POTENTIALS; P TYPE SEMICONDUCTOR; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTRODE; SEMICONDUCTOR FILMS; WATER SPLITTING;

ALUMINUM; COPPER; DOPING (ADDITIVES); ELECTROCHEMISTRY; GLASS; INDIUM; METALS; SEMICONDUCTING INDIUM; SOLUTIONS; SUBSTRATES; THERMAL EVAPORATION; TIN; X RAY DIFFRACTION;

ALUMINUM COATINGS;

EID: 84884381943     PISSN: 18761070     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jtice.2012.12.013     Document Type: Article

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