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Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 469-474

Photoelectrochemical performance of aluminum-doped AgIn5S 8 electrodes created using chemical bath deposition

(5) Cheng, Kong Wei a Huang, Chao Ming b Huang, Yung Lung a Chuang, Hao Jan a Wu, Yen Ching a

a CHANG GUNG UNIVERSITY (Taiwan)

b KUN SHAN UNIVERSITY (Taiwan)

Author keywords

Chemical synthesis; Optical property; Photoelectrode; Thin film

Indexed keywords

AG/AGCL; AL ALLOYS; AL CONTENT; AL-DOPING; ATOMIC RATIO; BINARY COMPOUNDS; CHEMICAL SYNTHESIS; CHEMICAL-BATH DEPOSITION; DIRECT BAND GAP; ENERGY DISPERSIONS; EXTERNAL POTENTIAL; FILM ELECTRODES; HALL MEASUREMENTS; MOLAR RATIO; MORPHOLOGY AND COMPOSITION; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOELECTROCHEMICALS; PHOTOELECTRODE; REFERENCE ELECTRODES; SCANNING ELECTRON MICROSCOPE; SOLUTION GROWTH METHOD; XE LAMP;

ALUMINUM; BINARY ALLOYS; CARRIER CONCENTRATION; CARRIER MOBILITY; DIFFRACTION; ELECTROCHEMISTRY; ELECTRODES; FILM GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INDIUM; INDIUM SULFIDE; NOBELIUM; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILVER; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION; XENON;

ALUMINUM ALLOYS;

EID: 80054044722 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.066 Document Type: Article

Times cited : (10)

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