SCOPUS 정보 검색 플랫폼

Solar Energy Materials and Solar Cells

Volumn 94, Issue 10, 2010, Pages 1790-1796

The preparation and characterization of Ga-doped CuInS2 films with chemical bath deposition

(5) Pan, Guan Ting a Lai, M H b Juang, Rei Cheng c Chung, T W d Yang, Thomas C K a

a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

b Taiwan Police College (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

d CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

Author keywords

CuInS2 crystalline; Photo absorbing layer; Photocatalysts; Photoelectrochemical performance

Indexed keywords

ABSORBING LAYERS; CARRIER DENSITY; CHEMICAL-BATH DEPOSITION; CRYSTALLINE PHASE; CUINS2 CRYSTALLINE; DEPOSITION METHODS; DIFFRACTOGRAMS; DOPING DENSITIES; ENERGY BANDGAPS; EXTERNAL POTENTIAL; FLAT BAND POTENTIAL; GA-DOPED; IMPEDANCE SPECTROSCOPY; MOLAR RATIO; MOTT-SCHOTTKY; P-TYPE; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PERFORMANCE; SEMICONDUCTOR PROPERTIES; VISIBLE LIGHT; XE LAMP; XRD;

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); HYDROGEN PRODUCTION; PHOTOVOLTAIC CELLS; XENON;

FILM PREPARATION;

EID: 77955469418 PISSN: 09270248 EISSN: None Source Type: Journal
DOI: 10.1016/j.solmat.2010.05.047 Document Type: Article

Times cited : (37)

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