Improved Laplace transform method to determine trap densities from transients: Application to ZnO and TiO2 films

Semiconductor Science and Technology

Volumn 13, Issue 12, 1998, Pages 1383-1391

  Studenikin, S A ^a   Golego, N ^a   Cocivera, M ^a  

^a UNIVERSITY OF GUELPH   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; LAPLACE TRANSFORMS; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; TITANIUM DIOXIDE;

NON-EXPONENTIAL TRANSIENTS;

TRANSIENTS;

EID: 0032291433     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/12/009     Document Type: Article

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