SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 382, Issue , 2013, Pages 56-60

Investigation of copper indium gallium selenide material growth by selenization of metallic precursors

(6) Han, Junfeng a,b Liao, Cheng b,c Jiang, Tao b Xie, Huamu b Zhao, Kui b Besland, M P a

a UNIVERSITÉ DE NANTES (France)

b PEKING UNIVERSITY (China)

c Chengdu Green Energy and Green Manufacturing Technology R and D Center (China)

Author keywords

A1. Characterization; A3. Physical vapor deposition processes; B1. Inorganic compounds; B2. Quaternary; B2. Semiconducting alloys; B2. Semiconducting indium compounds; B3. Solar cells

Indexed keywords

ANNEALING TEMPERATURES; B2. QUATERNARY; CRYSTALLINE PLATELETS; CRYSTALLINE STRUCTURE; HEXAGONAL STRUCTURES; INCREASED TEMPERATURE; PHYSICAL VAPOR DEPOSITION PROCESS; SEMICONDUCTING ALLOYS;

COPPER; CRYSTALLINE MATERIALS; FIELD EMISSION MICROSCOPES; FILM GROWTH; GALLIUM; GRAIN GROWTH; INDIUM; INORGANIC COMPOUNDS; PHYSICAL VAPOR DEPOSITION; THIN FILMS; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84883550582 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2013.08.009 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.