The effects of the morphology on the CIGS thin films prepared by CuInGa single precursor

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 261-263

  Su, Cherng Yuh ^a   Ho, Wei Hao ^a   Lin, Hsuan Ching ^b   Nieh, Cuo Yo ^c   Liang, Shih Chang ^c  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

CIGS thin films; CuInGa metallic precursors; Surface morphology

Indexed keywords

CIGS FILMS; CIGS THIN FILMS; COMPOSITION RATIO; DIRECT CURRENT MAGNETRON SPUTTERING; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; METALLIC PRECURSOR; PRECURSOR FILMS; PREFERRED ORIENTATIONS; SELENIZATION; SINGLE CHALCOPYRITE PHASE; SINGLE LAYER; SINGLE PRECURSORS; SODA LIME GLASS;

COPPER COMPOUNDS; ELECTRON PROBE MICROANALYSIS; FIELD EMISSION; GALLIUM; GALLIUM ALLOYS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; THIN FILMS; VACUUM EVAPORATION; VAPOR DEPOSITION; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 78149359762     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.072     Document Type: Conference Paper

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