Fabrication of DNA-templated te and Bi2Te3 nanowires by galvanic displacement

Langmuir

Volumn 29, Issue 35, 2013, Pages 11176-11184

  Liu, Jianfei ^a   Uprety, Bibek ^a   Gyawali, Shailendra ^a   Woolley, Adam T ^b   Myung, Nosang V ^c   Harb, John N ^a  

^a Brigham Young University   (United States)

^b Brigham Young University   (United States)

^c University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DNA; ELECTROLESS PLATING; FABRICATION; NANOWIRES; NICKEL; SUBSTITUTION REACTIONS; TELLURIUM COMPOUNDS; WIRE;

ACIDIC SOLUTIONS; BISMUTH TELLURIDE; DEVICE FABRICATIONS; GALVANIC DISPLACEMENT; GALVANIC DISPLACEMENT REACTIONS; NICKEL NANOWIRES; SITE-SPECIFIC; TELLURIUM NANOWIRES;

BISMUTH COMPOUNDS;

BISMUTH; BISMUTH TELLURIDE; COPPER; NANOWIRE; NICKEL; SILVER; TELLURIUM; VIRUS DNA;

ARTICLE; ATOMIC FORCE MICROSCOPY; BACTERIOPHAGE LAMBDA; CHEMISTRY; ELECTROCHEMICAL ANALYSIS; SCANNING ELECTROCHEMICAL MICROSCOPY; ULTRASTRUCTURE;

BACTERIOPHAGE LAMBDA; BISMUTH; COPPER; DNA, VIRAL; ELECTROCHEMICAL TECHNIQUES; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTROCHEMICAL, SCANNING; NANOWIRES; NICKEL; SILVER; TELLURIUM;

EID: 84883476778     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la402678j     Document Type: Article

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