Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths

Electrochimica Acta

Volumn 55, Issue 3, 2010, Pages 743-752

  Chang, Chong Hyun ^a   Rheem, Youngwoo ^a   Choa, Yong Ho ^b   Shin, Dong Hyuk ^b   Park, Deok Yong ^c   Myung, Nosang V ^a  

^a University of California Riverside   (United States)

^b Hanyang University   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

Bismuth; Electroless deposition; Galvanic displacement; Tellurium; Thermoelectric materials

Indexed keywords

BI THIN FILMS; CHEMICAL DISSOLUTION; ELECTROLESS DEPOSITION; GALVANIC DISPLACEMENT; IRON GROUP; MIXED POTENTIAL; NANO-PLATELETS; OPEN CIRCUIT POTENTIAL; SACRIFICIAL MATERIAL; THERMOELECTRIC MATERIAL; THERMOELECTRIC MATERIALS;

BISMUTH; DISSOLUTION; FLUORINE CONTAINING POLYMERS; MORPHOLOGY; NICKEL; OPEN CIRCUIT VOLTAGE; SURFACE MORPHOLOGY; TELLURIUM; TELLURIUM COMPOUNDS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; VAPOR DEPOSITION;

COBALT;

EID: 70549113155     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.09.038     Document Type: Article

References (52)

1. Martίn-González M.S., Prieto A.L., Gronsky R., Sands T., and Stacy A.M. J. Electrochem. Soc. 149 (2002) C546
2. Cronin S.B., Lin Y.-M., Rabin O., Black M.R., Ying J.Y., Dresselhaus M.S., Gai P.L., Minet J.-P., and Issi J.-P. Nanotechnology 13 (2002) 653
3. Cornelius T.W., Brötz J., Chtanko N., Dobrev D., Miehe G., Neumann R., and Toimil Molares M.E. Nanotechnology 16 (2005) S246
4. Lu M., Zieve R.J., van Hulst A., Jaeger H.M., Rosenbaum T.F., and Radelaar S. Phys. Rev. B 53 (1996) 1609
5. Yang F.Y., Liu K., Chien C.L., and Searson P.C. Phys. Rev. Lett. 82 (1999) 3328
6. Liu K., Chien C.L., Searson P.C., and Yu-Zhang K. Appl. Phys. Lett. 73 (1998) 1436
7. Boukai A., Xu K., and Heath J.R. Adv. Mater. 18 (2006) 864
8. Zhang Z., Sun X., Dresselhaus M.S., Ying J.Y., and Heremans J.P. Appl. Phys. Lett. 73 (1998) 1589
9. Garcia N., Kao Y.H., and Strongin M. Phys. Rev. B 5 (1972) 2029
10. Li Y., Wang J., Deng Z., Wu Y., Sun X., Yu D., and Yang P. J. Am. Chem. Soc. 123 (2001) 9904
11. Yang B., Li C., Hu H., Yang X., Li Q., and Qian Y. Eur. J. Inorg. Chem. 2003 (2003) 3699
12. Liu X.-Y., Zeng J.-H., Zhang S.-Y., Zheng R.-B., Liu X.-M., and Qian Y.-T. Chem. Phys. Lett. 374 (2003) 348
13. Heremans J., Thrush C.M., Lin Y.-M., Cronin S., Zhang Z., Dresselhaus M.S., and Mansfield J.F. Phys. Rev. B 61 (2000) 2921
14. Mohanty P., Kang T., Kim B., and Park J. J. Phys. Chem. B 110 (2006) 791
15. Xi G., Peng Y., Yu W., and Tian Q. Cryst. Growth Des. 5 (2005) 325
16. Mayers B., and Xia Y. J. Mater. Chem. 12 (2002) 1875
17. Arai K., Hagiwara S., Takayama S., Murase K., Hirato T., and Awakura Y. Electrochem. Commun. 8 (2006) 605
18. Khairulaev M.R., Dadaev D.Kh., and Rasulov M.M. Russ. J. Inorg. Chem. 51 (2006) 1706
19. Henshaw G., Parkin I.P., and Shaw G.A. J. Chem. Soc. Dalton Trans. (1997) 231
20. Xiao F., Yoo B.Y., Ryan M.A., Lee K.-H., and Myung N.V. Electrochim. Acta 52 (2006) 1101
21. Venkatasubramanian R., Colpitts T., Watko E., Lamvik M., and El-Masry N. J. Cryst. Growth 170 (1997) 817
22. Zhu Y.J., Wang W.W., Qi R.J., and Hu X.L. Angew. Chem. Int. Ed. 43 (2004) 1410
23. Tang Z., Wang Y., Sun K., and Kotov N.A. Adv. Mater. 17 (2005) 358
24. Li X.L., Cao G.H., Feng C.M., and Li Y.D. J. Mater. Chem. 14 (2004) 244
25. Lu Q., Gao F., and Komarneni S. Adv. Mater. 16 (2004) 1629
26. Geng B., Lin Y., Peng X., Meng G., and Zhang L. Nanotechnology 14 (2003) 983
27. Park D.-Y., Myung N.V., Schwartz M., and Nobe K. Electrochim. Acta 47 (2002) 2893
28. Carraro C., Maboudian R., and Magagnin L. Surf. Sci. Rep. 62 (2007) 499
29. Carraro C., Magagnin L., and Maboudian R. Electrochim. Acta 47 (2002) 2583
30. Wang C.-H., Sun D.-C., and Xia X.-H. Nanotechnology 17 (2006) 651
31. Bansal V., Jani H., Du Plessis J., Coloe P.J., and Bhargava S.K. Adv. Mater. 20 (2008) 717
32. Sun Y.G., Mayers B.T., and Xia Y.N. Nano Lett. 2 (2002) 481
33. Sun Y.G., Mayers B., and Xia Y.N. Adv. Mater. 15 (2003) 641
34. Porter L.A., Choi H.C., Ribbe A.E., and Buriak J.M. Nano Lett. 2 (2002) 1067
35. Porter L.A., Choi H.C., Schmeltzer J.M., Ribbe A.E., Elliott L.C.C., and Buriak J.M. Nano Lett. 2 (2002) 1369
36. Nezhad M.R.H., Aizawa M., Porter Jr. L.A., Ribbe A.E., and Buriak J.M. Small 1 (2005) 1076
37. Aizawa M., Cooper A.M., Malac M., and Buriak J.M. Nano Lett. 5 (2005) 815
38. Chyan O.M.R., Chen J.-J., Chien H.Y., Sees J., and Hall L. J. Electrochem. Soc. 143 (1996) 92
39. Jeon J.S., Raghavan S., Parks H.G., Lowell J.K., and Ali I. J. Electrochem. Soc. 143 (1996) 2870
40. Niwa D., Homma T., and Osaka T. J. Phys. Chem. B 108 (2004) 9900
41. Niwa D., Homma T., and Osaka T. J. Electrochem. Soc 152 (2005) C54
42. Wang C.Y., Lu M.Y., Chen H.C., and Chen L.J. J. Phys. Chem. C 111 (2007) 6215
43. Sun Y., and Xia Y. Adv. Mater. 16 (2004) 264
44. Chen J., Wiley B., McLellan J., Xiong Y., Li Z.-Y., and Xia Y. Nano Lett. 5 (2005) 2058
45. Xiao F., Yoo B.Y., Lee K.-H., and Myung N.V. J. Am. Chem. Soc. 129 (2007) 10068
46. y thin films from sacrificial iron group thin films Electrochim. Acta, in press.
47. http://www.webelements.com
48. Schwartz M. In: Bunshah R.F. (Ed). Handbook of Deposition Technologies for Films and Coatings. Second ed. (1994), Noyes Publications, Park Ridge, NJ 524
49. Electroless plating: fundamentals and applications. In: Mallory G.O., and Hajdu J.B. (Eds). American Electroplaters and Surface Finishers Society. Orlando, Florida (1990) p. 111, 476
50. Homma T., Kita Y., and Osaka T. J. Electrochem. Soc. 147 (2000) 160
51. Homma T., Inoue K., Asai H., Ohrui K., and Osaka T. IEEE Trans. Magn. 27 (1991) 4909
52. Brenner A., Couch D.W., and Williams E.K. J. Res. Nat. Bur. Stand. 44 (1950) 109