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Volumn 83, Issue , 2013, Pages 87-91

Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates

Author keywords

Direct band gap engineering; Electroluminescence; Germanium pin LED; Heterojunction; Tensile strain

Indexed keywords

ENERGY GAP; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; STRAINED SILICON; SUBSTRATES; TEMPERATURE; TENSILE STRAIN;

EID: 84883451756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.01.041     Document Type: Article
Times cited : (20)

References (14)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.