Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates

Solid-State Electronics

Volumn 83, Issue , 2013, Pages 87-91

  Kaschel, Mathias ^a   Schmid, Marc ^a   Gollhofer, Martin ^a   Werner, Jens ^a   Oehme, Michael ^a   Schulze, Jörg ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Direct band gap engineering; Electroluminescence; Germanium pin LED; Heterojunction; Tensile strain

Indexed keywords

ENERGY GAP; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; STRAINED SILICON; SUBSTRATES; TEMPERATURE; TENSILE STRAIN;

DIRECT BAND GAP; DOUBLE HETEROJUNCTIONS; ELECTROLUMINESCENCE INTENSITY; ELECTROLUMINESCENCE SPECTRA; INFRARED SHIFTS; INTRINSIC LAYER THICKNESS; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; SILICON SUBSTRATES;

ELECTROLUMINESCENCE;

EID: 84883451756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.01.041     Document Type: Article

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