Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Banno, Kazuya ^a   Mizuno, Masaya ^a   Fujita, Kazuhisa ^a   Kubo, Toshiharu ^a   Miyoshi, Makoto ^a   Egawa, Takashi ^a   Soga, Tetsuo ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON (A-C); ARC PLASMA DEPOSITION; CATALYTIC REACTIONS; GRAPHENE LAYERS; HIGH TEMPERATURE; INSULATING SUBSTRATES; METALLIC PARTICLES; NICKEL FILM;

AGGLOMERATION; AMORPHOUS CARBON; CATALYSIS; NICKEL; SILICON; SUBSTRATES;

GRAPHENE;

EID: 84883435294     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818342     Document Type: Article

References (18)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. Y. H. Wu, T. Yu, and Z. X. Shen, J. Appl. Phys. 108, 071301 (2010). 10.1063/1.3460809
3. Y. M. Lin, C. Dimitrakopoulos, K. A. Tenkins, D. B. Farmer, H. Y. Chiu, A. Grill, and Ph. Avouris, Science 327, 662 (2010). 10.1126/science.1184289
4. F. Schwierz, Nat. Nanotechnol. 5, 487 (2010). 10.1038/nnano.2010.89
5. I. Forbeaux, J. M. Themlin, and J. M. Debever, Phys. Rev. B 58, 16396 (1998). 10.1103/PhysRevB.58.16396
6. K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Röhrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller, Nature Mater. 8, 203 (2009). 10.1038/nmat2382
7. A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Penuelas, P. Jegou, A. Shukla, T. Chassagne, and M. Zielinski, Appl. Phys. Lett. 96, 191910 (2010). 10.1063/1.3427406
8. G. Kalita, M. Masahiro, H. Uchida, K. Wakita, and M. Umeno, Mater. Lett. 64, 2180 (2010). 10.1016/j.matlet.2010.07.005
9. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Blovic, M. S. Dresselhaus, and J. Kong, Nano Lett. 9, 30 (2009). 10.1021/nl801827v
10. E. Kim, W. G. Lee, and J. Jung, Electron. Mater. Lett. 7, 261 (2011). 10.1007/s13391-011-0915-z
11. J. Kim, M. Ishihara, Y. Koga, K. Tsugawa, M. Hasegawa, and S. Iijima, Appl. Phys. Lett. 98, 091502 (2011). 10.1063/1.3561747
12. Y. Kim, W. Song, S. Y. Lee, C. Jeon, W. Jung, M. Kim, and C.-Y. Park, Appl. Phys. Lett. 98, 263106 (2011). 10.1063/1.3605560
13. M. Keidar, A. Shashurin, J. L. O. Volotskova, M. Kundrapu, and T. S. Zhuang, J. Phys. D 44, 174006 (2011). 10.1088/0022-3727/44/17/174006
14. K. Fujita, K. Banno, H. R. Aryal, and T. Egawa, Appl. Phys. Lett. 101, 163109 (2012). 10.1063/1.4761474
15. Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen, and S.-S. Pei, Appl. Phys. Lett. 93, 113103 (2008). 10.1063/1.2982585
16. Y. Miyata, K. Kamon, K. Ohashi, R. Kitaura, M. Yoshimura, and H. Shinohara, Appl. Phys. Lett. 96, 263105 (2010). 10.1063/1.3458797
17. M. Zheng, K. Takei, B. Hsia, H. Fang, X. Zhang, N. Ferralis, H. Ko, Yu. L. Chueh, Y. Zhang, R. Maboudian, and A. Javey, Appl. Phys. Lett. 96, 063110 (2010). 10.1063/1.3318263
18. J. Shim, D. Kim, M. Choe, T. Lee, S. Park, and D. Lee, Nanotechnology 23, 255201 (2012). 10.1088/0957-4484/23/25/255201