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Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

(9) Juday, R a Fischer, A M a Huang, Y a Huang, J Y a Kim, H J b Ryou, J H c Dupuis, R D b Bour, D P d Ponce, F A a

a ARIZONA STATE UNIVERSITY (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c University of Houston (United States)

d Avogy Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BOUND EXCITON; CATHODOLUMINESCENCE SPECTRA; ELECTRON-BEAM IRRADIATIONS; GAN FILM; MG-DOPING; RADIATIVE TRANSITIONS; SPECTRAL REGION;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

HYDROGEN;

EID: 84883363330 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4819029 Document Type: Article

Times cited : (13)

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