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Volumn , Issue , 2013, Pages 105-108

MTJ/MOS-hybrid logic-circuit design flow for nonvolatile logic-in-memory LSI

Author keywords

[No Author keywords available]

Indexed keywords

CELL-BASED DESIGN; DESIGN FLOWS; DESIGN TOOL; DEVICE MODELING; LOGIC IN MEMORY; LOGIC-IN-MEMORY ARCHITECTURE; NON-VOLATILE; PATTERN LAYOUT;

EID: 84883361245     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2013.6571793     Document Type: Conference Paper
Times cited : (4)

References (9)
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    • S. Matsunaga, et al., "Standby-Power-Free Compact Ternary Content- Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices," Applied Physics Express (APEX), vol. 2, no. 2, pp. 023004- 1-023004-3, 2009.
    • (2009) Applied Physics Express (APEX) , vol.2 , Issue.2 , pp. 0230041-0230043
    • Matsunaga, S.1
  • 2
    • 34247863686 scopus 로고    scopus 로고
    • Magnetic tunnel junctions for spintronic memories and beyond
    • S. Ikeda et al., "Magnetic tunnel junctions for spintronic memories and beyond," IEEE Trans. Electron Devices, vol.54, no.05, pp. 991-1002, 2007.
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    • Ikeda, S.1
  • 3
    • 84866627442 scopus 로고    scopus 로고
    • High-speed simulator including accurate MTJ models for spintronics circuit design
    • N. Sakimura et al., "High-speed simulator including accurate MTJ models for spintronics circuit design," Proc. IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 1971-1974, 2012.
    • (2012) Proc. IEEE Int. Symp. Circuits and Systems (ISCAS) , pp. 1971-1974
    • Sakimura, N.1
  • 4
    • 85008008190 scopus 로고    scopus 로고
    • 2 Mb SPRAM (spin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
    • T. Kawahara et al., "2 Mb SPRAM (spin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read," IEEE J. Solid-State Circuits, vol. 43, no. 1, pp. 109-120, 2008.
    • (2008) IEEE J. Solid-State Circuits , vol.43 , Issue.1 , pp. 109-120
    • Kawahara, T.1
  • 5
    • 84866526141 scopus 로고    scopus 로고
    • Demonstration of non-volatile working memory through interface engineering in STT-MRAM
    • C. Yoshida et al., "Demonstration of non-volatile working memory through interface engineering in STT-MRAM," IEEE Symp. VLSI Technology, Dig. Tech. Papers, pp. 59-60, 2012.
    • (2012) IEEE Symp. VLSI Technology, Dig. Tech. Papers , pp. 59-60
    • Yoshida, C.1
  • 6
    • 78651091248 scopus 로고    scopus 로고
    • Current switching in MgO Based magnetic tunneling junctions
    • W. Zhu, H. Li, Y. Chen, and X. Wang, "Current switching in MgO Based magnetic tunneling junctions," IEEE Trans. Magn., vol. 47, no.1, pp. 156-120, 2011.
    • (2011) IEEE Trans. Magn. , vol.47 , Issue.1 , pp. 156-120
    • Zhu, W.1    Li, H.2    Chen, Y.3    Wang, X.4
  • 7
    • 84861743488 scopus 로고    scopus 로고
    • Design of a 270ps-Access 7T-2MTJ cell circuit for a high-speed-search nonvolatile ternary content-addressable memory
    • S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a 270ps-Access 7T-2MTJ Cell Circuit for a High- Speed-Search Nonvolatile Ternary Content-Addressable Memory," Journal of applied physics, Vol.111, No.7, pp.07E336-1-07E336-3, 2012.
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  • 8
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    • Design of a compact nonvolatile 4-input logic element using a magnetic-tunnel-junction and metal-oxide-semiconductor hybrid structure
    • D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Compact Nonvolatile 4-Input Logic Element Using a Magnetic-Tunnel- Junction and Metal-Oxide-Semiconductor Hybrid Structure," Japanese journal of applied physics, Vol.51, No.4, pp.04DM02-1-04DM02-5, 2012.
    • (2012) Japanese Journal of Applied Physics , vol.51 , Issue.4
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.