Current switching in MgO-based magnetic tunneling junctions

IEEE Transactions on Magnetics

Volumn 47, Issue 1 PART 2, 2011, Pages 156-160

  Zhu, Wenzhong ^a   Li, Hai ^b   Chen, Yiran ^c   Wang, Xiaobin ^a  

^a SEAGATE TECHNOLOGY   (United States)

^b POLYTECHNIC UNIVERSITY   (United States)

^c University of Pittsburgh   (United States)

Author keywords

Magnetic switches; random access memories

Indexed keywords

CURRENT SWITCHING; DRIVING CURRENT; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MAGNETIC SWITCHES; MAGNETIC TUNNELING JUNCTIONS; MAGNETIZATION SWITCHING; MEMORY DEVICE; NEW DEVICES; OPERATING SPEED; RANDOM ACCESS MEMORIES; SINGLE TRANSISTORS; SPIN TRANSFER; SPIN-TRANSFER SWITCHING; SWITCHING CURRENTS; TIME RANGE; TRANSISTOR CHARACTERISTICS; WRITE MARGIN;

OPTIMIZATION; RANDOM ACCESS STORAGE; SWITCHING; TRANSISTORS;

MAGNETIC DEVICES;

EID: 78651091248     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2085441     Document Type: Article

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