Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 1, 2004, Pages 63-67

  Kumar, M Jagadesh ^a   Rao, D V ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; PRODUCT DESIGN; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SWITCHING; THERMAL EFFECTS; VLSI CIRCUITS;

COLLECTOR CURRENTS; SCKOTTKY COLLECTOR BIPOLAR TRANSISTORS (SCBT);

BIPOLAR TRANSISTORS;

EID: 1542397847     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040196     Document Type: Conference Paper

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