A novel Doping-less Bipolar Transistor with Schottky Collector

2011 International Semiconductor Device Research Symposium, ISDRS 2011

Volumn , Issue , 2011, Pages

  Nadda, Kanika ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; BIPOLAR DEVICE; BIPOLAR PROCESS; CMOS PROCESSS; DOPANT ACTIVATION; METAL ELECTRODES; NEW DEVICES; NONIDEAL EFFECTS; SCHOTTKY COLLECTOR;

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON;

SEMICONDUCTOR DOPING;

EID: 84857217700     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2011.6135343     Document Type: Conference Paper

References (4)

1. B. Rajasekharan, C. Salm, R. J. E. Hueting, T. Hoang, and J. Schmitz, "The charge plasma p-n diode", IEEE Electron Device Lett., vol. 29, pp. 1367-1369, December 2008.
2. ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA, 2010.
3. M. J. Kumar and D. V. Rao, "A new Lateral PNM Schottky Collector Bipolar Transistor (SCBT) on SOI for Non-saturating VLSI Logic Design," IEEE Trans. on Electron Devices, Vol. 49, No. 6, June 2002.
4. M. J. Kumar and V. Parihar, "Surface Accumulation Layer Transistor (SALTran): A New Bipolar Transistor for Enhanced Current Gain and Reduced Hot-Carrier Degradation," IEEE Trans. on Device and Materials Reliability, Vol. 4, no.3, pp. 509-515, Sep- 2004.