InP DHBTs having lateral and sidewall collector schottky contacts

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 163-170

  Cohen Elias, Doron ^a   Gavrilov, Arkady ^b   Cohen, Shimon ^b   Kraus, Shraga ^b   Ritter, Dan ^b  

^a Tower Jazz Semiconductors Ltd ^*  (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Double heterojunction bipolar transistor (DHBT); indium phosphide (InP); Schottky contact

Indexed keywords

BASE-COLLECTORS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; FABRICATION PROCESS; FRINGING CAPACITANCE; HIGH FREQUENCY PERFORMANCE; INP; SCHOTTKY CONTACTS;

INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84871800295     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2224664     Document Type: Article

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