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Volumn 43, Issue 7, 2003, Pages 1145-1149

2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0038112176     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00140-9     Document Type: Conference Paper
Times cited : (4)

References (26)
  • 1
    • 0030564803 scopus 로고    scopus 로고
    • Recent progress of heterostructure technologies for novel silicon devices
    • Miyao M., Nakagawa K., Nakahara H., Kiyota Y., Kondo M. Recent progress of heterostructure technologies for novel silicon devices. Appl. Surf. Sci. 102:1996;360-371.
    • (1996) Appl. Surf. Sci. , vol.102 , pp. 360-371
    • Miyao, M.1    Nakagawa, K.2    Nakahara, H.3    Kiyota, Y.4    Kondo, M.5
  • 2
    • 0032623796 scopus 로고    scopus 로고
    • Wide bandgap semiconductor material for high temperature electronics
    • Chalker P.R. Wide bandgap semiconductor material for high temperature electronics. Thin Solid Films. 343:1999;616-622.
    • (1999) Thin Solid Films , vol.343 , pp. 616-622
    • Chalker, P.R.1
  • 3
    • 0024681269 scopus 로고
    • A simulation study of high-speed silicon hetero-emitter bipolar transistors
    • Ugajin M., Konaka S., Yokoyama K., Amemiya Y. A simulation study of high-speed silicon hetero-emitter bipolar transistors. IEEE Trans. Electron Dev. 36:1989;1102-1109.
    • (1989) IEEE Trans. Electron Dev. , vol.36 , pp. 1102-1109
    • Ugajin, M.1    Konaka, S.2    Yokoyama, K.3    Amemiya, Y.4
  • 4
    • 0032139209 scopus 로고    scopus 로고
    • Profile design considerations for minimizing the base transit time in SiGe HBTs
    • Patri V.S., Kumar M.J. Profile design considerations for minimizing the base transit time in SiGe HBTs. IEEE Trans. Electron Dev. 45:1998;1725-1732.
    • (1998) IEEE Trans. Electron Dev. , vol.45 , pp. 1725-1732
    • Patri, V.S.1    Kumar, M.J.2
  • 5
    • 0033207634 scopus 로고    scopus 로고
    • Novel Ge profile design for high speed SiGe HBTs
    • Patri V.S., Kumar M.J. Novel Ge profile design for high speed SiGe HBTs. IEE Proc. - Circ. Dev. Syst. 146:1999;291-296.
    • (1999) IEE Proc. - Circ. Dev. Syst. , vol.146 , pp. 291-296
    • Patri, V.S.1    Kumar, M.J.2
  • 7
    • 0025518991 scopus 로고
    • Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
    • Sugii T., Yamzaki T., Ito T. Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base. IEEE Trans. Electron Dev. 37:1990;2331-2335.
    • (1990) IEEE Trans. Electron Dev. , vol.37 , pp. 2331-2335
    • Sugii, T.1    Yamzaki, T.2    Ito, T.3
  • 9
    • 0036610638 scopus 로고    scopus 로고
    • A new lateral PNM Schottky collector bipolar transistor on SOI for nonsaturating VLSI logic design
    • Kumar M.J., Rao D.V. A new lateral PNM Schottky collector bipolar transistor on SOI for nonsaturating VLSI logic design. IEEE Trans. Electron Dev. 49:2002;1070-1072.
    • (2002) IEEE Trans. Electron Dev. , vol.49 , pp. 1070-1072
    • Kumar, M.J.1    Rao, D.V.2
  • 10
    • 0004022746 scopus 로고    scopus 로고
    • Silvaco International
    • ATLAS User's Manual, Silvaco International, 2000.
    • (2000) ATLAS User's Manual
  • 11
    • 0033729798 scopus 로고    scopus 로고
    • Current status and advances in the growth of SiC
    • Yakimova R., Janzen E. Current status and advances in the growth of SiC. Diamond Relat. Mater. 9:2000;432-438.
    • (2000) Diamond Relat. Mater. , vol.9 , pp. 432-438
    • Yakimova, R.1    Janzen, E.2
  • 12
    • 0034227225 scopus 로고    scopus 로고
    • SiC/Si heteroepitaxial growth
    • Kitabtake M. SiC/Si heteroepitaxial growth. Thin Solid Films. 369:2000;257-264.
    • (2000) Thin Solid Films , vol.369 , pp. 257-264
    • Kitabtake, M.1
  • 14
    • 0036531578 scopus 로고    scopus 로고
    • Lateral over-growth of 3C-SiC on patterned Si (1 1 1) substrates
    • Nishino S., Jacob C., Okui Y., Oshima S., Masuda Y. Lateral over-growth of 3C-SiC on patterned Si (1. 1 1) substrates J. Cryst. Growth. 237-239:2002;1250-1253.
    • (2002) J. Cryst. Growth , vol.237-239 , pp. 1250-1253
    • Nishino, S.1    Jacob, C.2    Okui, Y.3    Oshima, S.4    Masuda, Y.5
  • 15
    • 0024663483 scopus 로고
    • Properties of high heat-resistance μc-SiC:H emitter silicon HBTs
    • Kuwagaki M., Imai K., Amemiya Y. Properties of high heat-resistance μc-SiC:H emitter silicon HBTs. Jpn. J. Appl. Phys. 28(5):1989;L754-L756.
    • (1989) Jpn. J. Appl. Phys. , vol.28 , Issue.5
    • Kuwagaki, M.1    Imai, K.2    Amemiya, Y.3
  • 16
    • 0030284341 scopus 로고    scopus 로고
    • Ge-ion implantation in silicon for the fabrication of silicon/SiGe heterojunction transistors
    • Lombardo S., Raineri V., Via F.L., Iacona F., Campisano S.U., Pinto A.et al. Ge-ion implantation in silicon for the fabrication of silicon/SiGe heterojunction transistors. Mater. Chem. Phys. 46:1996;156-160.
    • (1996) Mater. Chem. Phys. , vol.46 , pp. 156-160
    • Lombardo, S.1    Raineri, V.2    Via, F.L.3    Iacona, F.4    Campisano, S.U.5    Pinto, A.6
  • 17
    • 0032735773 scopus 로고    scopus 로고
    • Si/SiGe heterojunction bipolar transistors formed by Ge-ion implantation in silicon narrowing of bandgap and base width
    • Lombardo S., Spinella C., Campisano S.U., Pinto A., Ward P. Si/SiGe heterojunction bipolar transistors formed by Ge-ion implantation in silicon narrowing of bandgap and base width. Nucl. Instr. Meth. B. 147:1999;56-61.
    • (1999) Nucl. Instr. Meth. B , vol.147 , pp. 56-61
    • Lombardo, S.1    Spinella, C.2    Campisano, S.U.3    Pinto, A.4    Ward, P.5
  • 20
    • 36449008502 scopus 로고
    • Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission
    • Jimenez J.R., Xiao X., Sturm J.C., Pellegrini P.W., Weeks M.M. Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission. J. Appl. Phys. 75(10):1994;5160-5164.
    • (1994) J. Appl. Phys. , vol.75 , Issue.10 , pp. 5160-5164
    • Jimenez, J.R.1    Xiao, X.2    Sturm, J.C.3    Pellegrini, P.W.4    Weeks, M.M.5
  • 22
    • 0027803922 scopus 로고
    • A self aligned lateral bipolar transistor realized on SIMOX
    • Edholm B., Olsson J., Soderbarg A. A self aligned lateral Bipolar Transistor realized on SIMOX. IEEE Trans. Electron Dev. 40:1993;2359-2360.
    • (1993) IEEE Trans. Electron Dev. , vol.40 , pp. 2359-2360
    • Edholm, B.1    Olsson, J.2    Soderbarg, A.3
  • 23
    • 0033322115 scopus 로고    scopus 로고
    • The 4H-SiC npn power bipolar junction transistor
    • Wang J., Williams B.W. The 4H-SiC npn power bipolar junction transistor. Semicond. Sci. Technol. 14:1999;1088-1097.
    • (1999) Semicond. Sci. Technol. , vol.14 , pp. 1088-1097
    • Wang, J.1    Williams, B.W.2
  • 24
    • 0024682740 scopus 로고
    • Collector offset voltage of hetero junction bipolar transistors grown by molecular beam epitaxy
    • Won T., Iyer S., Agarwala S., Morkoc H. Collector offset voltage of hetero junction bipolar transistors grown by molecular beam epitaxy. IEEE Electron Dev. Lett. EDL-10:1989;274.
    • (1989) IEEE Electron Dev. Lett. , vol.EDL-10 , pp. 274
    • Won, T.1    Iyer, S.2    Agarwala, S.3    Morkoc, H.4
  • 26
    • 0027643861 scopus 로고
    • Collector design trade-offs for low voltage applications of advanced bipolar transistors
    • Kumar M.J., Sadavnikov A.D., Roulston D.J. Collector design trade-offs for low voltage applications of advanced bipolar transistors. IEEE Trans. Electron Dev. 40:1993;1478-1483.
    • (1993) IEEE Trans. Electron Dev. , vol.40 , pp. 1478-1483
    • Kumar, M.J.1    Sadavnikov, A.D.2    Roulston, D.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.