Surface accumulation layer transistor (SALTran): A new bipolar transistor for enhanced current gain and reduced hot-carrier degradation

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 509-515

  Kumar, M Jagadesh ^a   Parihar, Vinod ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Bipolar transistor; Current gain; Hot carrier degradation; Reflecting boundary; Temperature effects

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC RESISTANCE; GAIN CONTROL; HOT CARRIERS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PHENOMENA; THERMAL EFFECTS;

CURRENT GAIN; EMITTER DOPING; HOT CARRIER DEGRADATION; REFLECTING BOUNDARIES;

BIPOLAR TRANSISTORS;

EID: 11144248829     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.829074     Document Type: Article

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