Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

Carbon

Volumn 49, Issue 7, 2011, Pages 2522-2525

  Ding, Xuli ^a,b   Ding, Guqiao ^b   Xie, Xiaoming ^b   Huang, Fuqiang ^c   Jiang, Mianheng ^a,b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC SUBSTRATES; DIRECT GROWTH; GRAPHENE LAYERS; HEXAGONAL BORON NITRIDE; HIGH QUALITY; LATTICE MATCHING; METAL CATALYST;

BORON; CATALYSTS; DIELECTRIC MATERIALS; GRAPHENE; MICROELECTRONICS; NITRIDES; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL VAPOR DEPOSITION;

EID: 79952993301     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.02.022     Document Type: Article

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