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Volumn 52, Issue 8 PART 2, 2013, Pages

633nm red emissions from InGaN nanocolumn light-emitting diode by radio frequency plasma assisted molecular beam epitaxy

(3) Vadivelu, Ramesh a Igawa, Yusuke a Kishino, Katsumi a

a SOPHIA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; DRIVE CURRENTS; GAN NANOCOLUMNS; MULTIQUANTUM WELLS; PEAK WAVELENGTH; RADIO-FREQUENCY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; RED EMISSIONS; UNIFORM ARRAY;

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; WAVE PLASMA INTERACTIONS;

LIGHT EMITTING DIODES;

EID: 84883148546 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.08JE18 Document Type: Article

Times cited : (26)

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