Etched graphene quantum dots on hexagonal boron nitride

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Engels, S ^a,b   Epping, A ^a,b   Volk, C ^a,b   Korte, S ^b   Voigtlander B ^b   Watanabe, K ^c   Taniguchi, T ^c   Trellenkamp, S ^b   Stampfer, C ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION AND CHARACTERIZATIONS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); ISLAND DIAMETERS; PEAK SPACING; PERPENDICULAR MAGNETIC FIELDS; STANDARD DEVIATION; WIDE ENERGY RANGE;

BORON NITRIDE; SEMICONDUCTOR QUANTUM DOTS;

GRAPHENE;

EID: 84882353537     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818627     Document Type: Article

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