Measuring the charge and spin states of electrons on individual dopant atoms in silicon

Topics in Applied Physics

Volumn 115, Issue , 2009, Pages 169-182

  Andresen, Søren E S ^a,e   McCamey, Dane R ^a,f   Brenner, Rolf ^a,g   Ahrens, Marc A ^a   Mitic, Mladen ^a   Chan, Victor C ^a   Gauja, Eric ^a   Hudson, Fay E ^a   Ferguson, Andrew J ^a,h   Buehler, Tilo M ^a,i   Reilly, David J ^a,j   Clark, Robert G ^a   Dzurak, Andrew S ^a   Hamilton, Alex R ^a   Wellard, Cameron J ^b   Yang, Changyi ^b   Hopf, Toby ^b   McCallum, Jeff ^b   Jamieson, David N ^b   Hollenberg, Lloyd C L ^b   Hutchison, Wayne D ^c   Huebl, Hans ^a,d   Brandt, Martin S ^d   more..

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d WALTER SCHOTTKY INSTITUT   (Germany)

^e UNIVERSITY OF COPENHAGEN   (Denmark)

^f UNIVERSITY OF UTAH   (United States)

^g NXP SEMICONDUCTORS   (Germany)

^h UNIVERSITY OF CAMBRIDGE   (United Kingdom)

ⁱ ABB CORPORATE RESEARCH   (Switzerland)

^j HARVARD UNIVERSITY   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84882261573     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/978-3-540-79365-6_9     Document Type: Article

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