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Volumn 250, Issue 8, 2013, Pages 1541-1545

Influence of microstructural defects on the thermal conductivity of GaN: A molecular dynamics study

Author keywords

Crystal defects; GaN; Molecular dynamics; Thermal conductivity

Indexed keywords

CRYSTAL DEFECTS; EDGE DISLOCATIONS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR DYNAMICS;

EID: 84881604586     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201349052     Document Type: Article
Times cited : (13)

References (25)
  • 9
    • 51549121829 scopus 로고    scopus 로고
    • Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications, in: IEEE Int. Reliability Physics Symposium, 2008 (IRPS 2008), 27 April-1 May 2008
    • S. Lee, R. Vetury, J. Brown, S. Gibb, W. Cai, J. Sun, D. Green, and J. Shealy, Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications, in: IEEE Int. Reliability Physics Symposium, 2008 (IRPS 2008), 27 April-1 May 2008, pp. 446-449.
    • Lee, S.1    Vetury, R.2    Brown, J.3    Gibb, S.4    Cai, W.5    Sun, J.6    Green, D.7    Shealy, J.8
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.