High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors

Applied Physics A: Materials Science and Processing

Volumn 112, Issue 4, 2013, Pages 807-815

  Choi, Sang Jun ^a   Kim, Ki Hong ^b   Yang, Woo Young ^b   Lee, Hyung Ik ^b   Heo, Sung ^b   Park, Gyeong Su ^b   Shin, Hyun Joon ^c   Yu, Hyeongwoo ^d   Kim, Minho ^d   Cho, Soohaeng ^d  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d Yonsei University Wonju   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH SPEED; MULTI-BITS; MULTIBIT OPERATIONS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCH-ON VOLTAGE;

SWITCHING;

SWITCHING SYSTEMS;

EID: 84881548674     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-013-7683-6     Document Type: Article

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