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Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

Improvement in resistive switching of Ba-doped BiFeO3 films

(6) Vagadia, Megha a Ravalia, Ashish a Solanki, P S a Choudhary, R J b Phase, D M b Kuberkar, D G a

a SAURASHTRA UNIVERSITY (India)

b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY-BAND DIAGRAM; FIELD CONDITIONS; I-V BEHAVIOR; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION PROPERTIES; SINGLE-CRYSTALLINE; SWITCHING DEVICES;

PHYSICAL PROPERTIES; PHYSICS;

SWITCHING SYSTEMS;

EID: 84881491185 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4813551 Document Type: Article

Times cited : (63)

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