Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-8

  Basu, Tanmoy ^a   Datta, Debi Prasad ^a   Som, Tapobrata ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

Atomic force microscopy; Ion beam patterning; Silicon

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; COARSENING; ION BEAMS; OSTWALD RIPENING; SILICON; SPUTTERING; SURFACE ROUGHNESS; TOPOGRAPHY;

ANGLES OF INCIDENCE; FACETED STRUCTURES; ION BEAM PATTERNING; MECHANISM-BASED; PARALLEL MODE; SHADOWING EFFECTS; SPUTTERING YIELDS; TEMPORAL EVOLUTION;

ION BOMBARDMENT;

EID: 84881227153     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-289     Document Type: Article

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