Effect of crystallinity on residual strain distribution in cast-grown Si

Japanese Journal of Applied Physics

Volumn 52, Issue 6 PART 1, 2013, Pages

  Jiptner, Karolin ^a,b   Fukuzawa, Masayuki ^c   Miyamura, Yoshiji ^a   Harada, Hirofumi ^a   Sekiguchi, Takashi ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; DISLOCATION DENSITIES; DISLOCATION DISTRIBUTIONS; HIGH STRAINS; MULTICRYSTALLINE SI; RESIDUAL STRAINS;

GRAIN BOUNDARIES; POLYSILICON;

INGOTS;

EID: 84881045963     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.065501     Document Type: Article

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