InP/GaAsSb DHBTs fabricated in a low-temperature teflon planarization process

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1135-1137

  Flückiger, Ralf ^a   Lövblom, Rickard ^a   Ostinelli, Olivier ^a   Benedickter, Hansruedi ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Double heterojunction bipolar transistors (DHBTs); InP GaAsSb; interlevel dielectrics (ILDs); millimeter wave transistors; Teflon amorphous fluoropolymer (Teflon AF)

Indexed keywords

AIR-BRIDGE PROCESS; BENZOCYCLOBUTENE; COMMON EMITTER; DISSIPATION FACTORS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; FLUOROPOLYMER; HBT TECHNOLOGY; INP; INTERLEVEL DIELECTRIC; LOW TEMPERATURES; PEAK CURRENTS; PLANARIZATION PROCESS; POLYIMIDE PLANARIZATION; SPIN-ON;

BUTENES; CUTOFF FREQUENCY; DIELECTRIC MATERIALS; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; POLYIMIDES; TEMPERATURE;

POLYTETRAFLUOROETHYLENES;

EID: 84864481729     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2201443     Document Type: Article

References (16)

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