P-Type Sb2Te3 and n-Type Bi2Te3 films for thermoelectric modules deposited by thermally assisted sputtering method

Japanese Journal of Applied Physics

Volumn 52, Issue 6 PART 2, 2013, Pages

  Mizoshiri, Mizue ^a   Mikami, Masashi ^a   Ozaki, Kimihiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL HEATING; COMPOSITION RATIO; DIRECT CURRENT MAGNETRON SPUTTERING; SPUTTERING METHODS; SPUTTERING TARGET; THERMO-ELECTRIC MODULES; THERMOELECTRIC FILM; THERMOELECTRIC PROPERTIES;

SUBSTRATES; THERMOELECTRICITY;

DEPOSITION;

EID: 84880981499     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.06GL07     Document Type: Conference Paper

References (30)

1. W. Qu, M. Plötner, and W. Fischer: J. Micromech. Microeng. 11 (2001) 146.
2. W. Glatz, S. Muntwyler, and C. Hierold: Sens. Actuators A 132 (2006) 337.
3. J. Weber, K. Potje-Kamloth, F. Haase, P. Detemple, F. Völklein, and T. Doll: Sens. Actuators A 132 (2006) 325.
4. L. M. Goncalves, J. G. Rocha, C. Couto, P. Alpuim, G. Min, D. M. Rowe, and J. H. Correia: J. Micromech. Microeng. 17 (2007) S168.
5. G. J. Snyder, J. R. Lim, C. Huang, and J. Fleurial: Nat. Mater. 2 (2003) 528.
6. M. Mizoshiri, M. Mikami, K. Ozaki, and K. Kobayashi: J. Electron. Mater. 41 (2012) 1713.
7. N. Wang, L. Han, H. He, N.-H. Park, and K. Koumoto: Energy Environ. Sci. 4 (2011) 3676.
8. M. Mizoshiri, M. Mikami, and K. Ozaki: Jpn. J. Appl. Phys. 51 (2012) 06FL07.
9. W. Shin, T. Nakashima, M. Nishibori, N. Izu, T. Itoh, and I. Matsubara: Curr. Appl. Phys. 11 (2011) S36.
10. D. H. Kim, E. Byon, G. H. Lee, and S. Cho: Thin Solid Films 510 (2006) 148.
11. R. E. Honing and D. A. Kramer: RCA Rev. 30 (1969) 285.
12. G. Bardi, M. L. Cafaro, V. D. Gianfreda, and V. Piacente: High Temp. Sci. 16 (1983) 377.
13. M. L. Cafaro, G. Bardi, and V. Piacente: J. Chem. Eng. Data 29 (1984) 78.
14. H. Noro, K. Sato, and H. Kagechika: J. Appl. Phys. 73 (1993) 1252.
15. H. Zou, D. M. Rowe, and G. Min: J. Vac. Sci. Technol. A 19 (2001) 899.
16. L. W. da Silva, M. Kaviany, and C. Uher: J. Appl. Phys. 97 (2005) 114903.
17. L. M. Goncalves, P. Alpuim, G. Min, D. M. Rowe, C. Couto, and J. H. Correia: Vacuum 82 (2008) 1499.
18. L. M. Goncalves, P. Alpuim, A. G. Rolo, and J. H. Carreia: Thin Solid Films 519 (2011) 4152.
19. H. Hu, W. Luan, and S. Tu: Thin Solid Films 517 (2009) 3731.
20. Z. H. Zheng, P. Fan, T. B. Chen, Z. K. Cai, P. J. Liu, G. X. Liang, D. P. Zhang, and X. M. Cai: Thin Solid Films 520 (2012) 5245.
21. A. L. Bassi, A. Bailini, C. S. Casari, F. Donati, A. Mantegazza, M. Passoni, V. Russo, and C. E. Bottani: J. Appl. Phys. 105 (2009) 124307.
22. K. Park, F. Xiao, B. Y. Yoo, Y. Rheem, and N. V. Myung: J. Alloys Compd. 485 (2009) 362.
23. W.-L. Wang, C.-C. Wan, and Y.-Y. Wang: Electrochim. Acta 52 (2007) 6502.
24. Y. Miyazaki and T. Kajitani: J. Cryst. Growth 229 (2001) 542.
25. Y. H. Shing, Y. Chang, A. Mirshafii, L. Hayashi, S. S. Roberts, J. Y. Josefowicz, and N. Tran: J. Vac. Sci. Technol. A 1 (1983) 503.
26. D. Bourgault, C. G. Garampon, N. Gaillault, L. Carbone, and J. A. Aymami: Thin Solid Films 516 (2008) 8579.
27. JCPDS PDF 15-0874.
28. JCPDS PDF 15-0863.
29. Y. Deng, H. Liang, Y. Wang, Z. Zhang, M. Tan, and J. Cui: J. Alloys Compd. 509 (2011) 5683.
30. O. Vigil-Galán, F. Cruz-Gandrilla, J. Fandiño, F. Roy, J. Sastré-Hernández, and G. Contreras-Puente: Semicond. Sci. Technol. 24 (2009) 025025. of Japan