Spin torque switching of perpendicularly magnetized CoFeB-based tunnel junctions with high thermal tolerance

IEEE Transactions on Magnetics

Volumn 49, Issue 7, 2013, Pages 4335-4338

  Yamane, Kazutaka ^a   Higo, Yutaka ^a   Uchida, Hiroyuki ^a   Nanba, Yuji ^a   Sasaki, Satoshi ^a   Ohmori, Hiroyuki ^a   Bessho, Kazuhiro ^a   Hosomi, Masanori ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Magnetoresistive random access memory (MRAM); perpendicular magnetic anisotropy (PMA); perpendicularly magnetized CoFeB; spin torque switching (STS); tunnel magnetoresistance (TMR)

Indexed keywords

ANNEALING TEMPERATURES; BACK END OF LINES; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR MAGNETIC ANISOTROPY; PERPENDICULARLY MAGNETIZED COFEB; SPIN-TORQUE SWITCHING; SYNTHETIC ANTIFERROMAGNETS; TUNNEL MAGNETORESISTANCE;

MRAM DEVICES; TUNNELLING MAGNETORESISTANCE;

COBALT COMPOUNDS;

EID: 84880847699     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2246141     Document Type: Article

References (18)

1. M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Ya-mane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, "A novel nonvolatile memory with spin torque transfer mag-natization switching: Spin-RAM," in Proc. IEEE Int. Electron Devices Meeting (IEDM). Tech. Dig., 2005, pp. 459-462. (Pubitemid 46370888)
2. C. J. Lin, S. H. Kang, Y. J. Wang, K. Lee, X. Zhu, W. C. Chen, X. Li, W. N. Hsu, Y. C. Kao, M. T. Liu, W. C. Chen, Y. Lin, M. Nowak, N. Yu, and L. Tran, "45 nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1 T/1 MTJ cell," in Proc. IEEE Int. Electron Devices Meeting (IEDM). Tech. Dig., 2009, pp. 279-282.
3. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction," Nature Mater, vol. 9, pp. 721-724, 2010.
4. H. Yoda, T. Kishi, T. Nagase, M. Yoshikawa, K. Nishiyama, E. Kita-gawa, T. Daibou, M. Amano, N. Shimomura, S. Takahashi, T. Kai, M. Nakayama, H. Aikawa, S. Ikegawa, M. Nagamine, J. Ozeki, S. Mizukami, M. Oogane, Y. Ando, S. Yuasa, K. Yakushiji, H. Kubota, Y. Suzuki, Y. Nakatani, T. Miyazaki, and K. Ando, "High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs," Curr. Appl. Phys., vol. 10, pp. e87-e89, 2010.
5. K. Yakushiji, K. Noma, T. Saruya, H. Kubota, A. Fukushima, T. Naga-hama, S. Yuasa, and K. Ando, "High magnetoresistance ratio and low resistance-area product in magnetic tunnel junctions with perpendicularly magnetized electrodes," Appl. Phys. Exp., vol. 3, p. 053003, 2010.
6. M. Gajek, J. J. Nowak, J. Z. Sun, P. L. Trouilloud, E. J. O'Sullivan, D. W. Abraham, M. C. Gaidis, G. Hu, S. Brown, Y. Zhu, R. P. Robertazzi, W. J. Gallagher, and D. C. Worledge, "Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy," Appl. Phys. Lett., vol. 100, p. 132408, 2012.
7. W. Kim, J. H. Jeong, Y. Kim, W. C. Lim, J. H. Kim, J. H. Park, H. J. Shin, Y. S. Park, K. S. Kim, S. H. Park, Y. J. Lee, K. W. Kim, H. J. Kwon, H. L. Park, H. S. Ahn, S. C. Oh, J. E. Lee, S. O. Park, S. Choi, H. K. Kang, and C. Chung, "Extended scalability of perpendicular STT-MRAM towards sub20 nm MTJ node," in Proc. IEEE Int. Electron Devices Meeting (IEDM). Tech. Dig., 2011, pp. 531-533.
8. K. Miura, S. Ikeda, M. Yamanouchi, H. Yamamoto, K. Mizunuma, H. D. Gan, J. Hayakawa, R. Koizumi, F. Matsumoto, and H. Ohno, "CoFeB/MgO based perpendicular magnetic tunnel junctions sith stepped structure for symmetrizing different retention times of "0" and "1" information," in Proc. Symp. VLSI Technol. (VLSIT), 2011, pp. 214-215.
9. R. H. Koch, J. A. Katine, and J. Z. Sun, "Time resolved reversal of spin transfer switching in a nanomagnet," Phys. Rev. Lett., vol. 92, p. 088302, 2004.
10. Y. Higo, K. Yamane, K. Ohba, N. Narisawa, K. Bessho, M. Hosomi, and H. Kano, "Thermal activation effect on spin transfer switching in magnetic tunnel junctions," Appl. Phys. Lett., vol. 87, p. 082502, 2005.
11. J. Z. Sun, R. P. Robertazzi, J. Nowak, P. L. Trouilloud, G. Hu, D. W. Abraham, M. C. Gaidis, S. L. Brown, E. J. O'Sullivan, W. J. Gallagher, and D. C. Worledge, "Effect of subvolume excitation and spin-torque efficiency on magnetic switching," Phys. Rev. B., vol. 84, p. 064413, 2011.
12. H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions," Appl. Phys. Lett., vol. 99, p. 042501, 2011.
13. C. L. Chien and R. Hasegawa," dependence of hyperfine field and spin-wave excitations in ferromagnetic metallic glasses," Phys. Rev. B., vol. 16, pp. 2115-2123, 1977.
14. S. Iihama, Q. Ma, T. Kubota, S. Mizukami, Y. Ando, and T. Miyazaki, "Damping of magnetization precession in perpendicularly magnetized CoFeB alloy thin films," APEX, vol. 5, p. 083001, 2012.
15. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Mat-sukura, H. Takahashi, and H. Ohno, "Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions," Japan J. Appl. Phys., vol. 44, pp. L1267-L1270, 2005. (Pubitemid 43200691)
16. C. Bilzer, T. Devolder, J.-V. Kim, G. Counil, and C. Chappert, "Study of the dynamic magnetic properties of soft CoFeB filmes," J. Appl. Phys., vol. 100, p. 053903, 2006.
17. S. Pal, B. Rana, O. Hellwig, T. Thomson, and A. Barman, "Tunable magnonic frequency and damping in multilayers with variable Co layer thicness," Appl. Phys. Lett., vol. 98, p. 082501, 2011.
18. K. Lee and S. H. Kang, "Development of embedded STT-MRAM for mobile system-on-chips," IEEE Trans. Magn., vol. 47, no. 1, pp. 131-136, Jan. 2011.