3-D mapping of sensitivity of graphene hall devices to local magnetic and electrical fields

IEEE Transactions on Magnetics

Volumn 49, Issue 7, 2013, Pages 3445-3448

  Rajkumar, R K ^a,b   Manzin, A ^c   Cox, D C ^a,b   Silva, S R P ^b   Tzalenchuk, A ^a   Kazakova, O ^a  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c ISTITUTO NAZIONALE DI RICERCA METROLOGICA   (Italy)

Author keywords

Epitaxial graphene; Hall sensor; numerical modeling

Indexed keywords

ELECTRICAL FIELD; EPITAXIAL GRAPHENE; HALL SENSOR; INDEPENDENT CONTRIBUTIONS; INHOMOGENEOUS MAGNETIC FIELD; MAGNETIC AND ELECTRIC FIELDS; MAGNETO TRANSPORT PROPERTIES; VERTICAL POSITIONS;

ELECTRIC FIELDS; EPITAXIAL GROWTH; HALL EFFECT TRANSDUCERS; NUMERICAL MODELS; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84880833210     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2243708     Document Type: Article

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