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Volumn 52, Issue 4 PART 2, 2013, Pages

Si waveguide-integrated metal-semiconductor-metal and p-i-n-Type ge photodiodes using si-capping layer

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN ELECTRIC FIELDS; ELECTRODE SPACING; METAL ELECTRODES; METAL SEMICONDUCTOR METAL; SCHOTTKY BARRIER HEIGHTS; SCREENING EFFECT; SI CAPPING LAYER; ZERO-BIAS VOLTAGE;

EID: 84880792856     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.04CG10     Document Type: Conference Paper
Times cited : (38)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.