Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver

Optics Express

Volumn 20, Issue 8, 2012, Pages 9312-9321

  Nishi, Hidetaka ^a   Tsuchizawa, Tai ^a   Kou, Rai ^a   Shinojima, Hiroyuki ^a   Yamada, Takashi ^b   Kimura, Hideaki ^b   Ishikawa, Yasuhiko ^c   Wada, Kazumi ^c   Yamada, Koji ^a  

^a NTT CORPORATION   (Japan)

^b NTT Access Network Service Systems Laboratories   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SILICA; SILICON;

FLIP-CHIP BONDING; HIGH-SPEED SIGNALS; LOW-TEMPERATURE FABRICATION; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; MULTI-CHANNEL; SI PHOTONICS; SIGNAL CONVERSION; TRANSIMPEDANCE AMPLIFIERS;

ARRAYED WAVEGUIDE GRATINGS;

EID: 84860211283     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.009312     Document Type: Article

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