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Thin Solid Films

Volumn 519, Issue 11, 2011, Pages 3819-3821

Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal-germanium-metal photodetectors

(2) Hwang, J D a Zhang, E H b

a NATIONAL CHIAYI UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

a Si:H; Passivation; Responsivity; Schottky barrier height

Indexed keywords

A-SI:H; DARK CURRENT RATIO; DEFECT CENTERS; GE SURFACES; HIGH QUALITY; METAL GERMANIUM METALS; PASSIVATION LAYER; RESPONSIVITY; SCHOTTKY-BARRIER HEIGHTS;

DARK CURRENTS; GERMANIUM; METALS; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES;

AMORPHOUS SILICON;

EID: 79952735733 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.232 Document Type: Article

Times cited : (11)

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