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Volumn 2, Issue 5, 2013, Pages

A self-rectifying unipolar hfox based RRAM using doped germanium bottom Electrode

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY STRUCTURES; BOTTOM ELECTRODES; GERMANIUM SUBSTRATES; HFOX BASED RRAM; NONVOLATILE MEMORY DEVICES; RESISTIVE SWITCHING BEHAVIORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

EID: 84880441783     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.006305ssl     Document Type: Article
Times cited : (20)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.