Interface-controlled high dielectric constant Al2O 3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Journal of Applied Physics

Volumn 114, Issue 2, 2013, Pages

  Lee, Geunhee ^a,c   Lai, Bo Kuai ^b,d   Phatak, Charudatta ^b   Katiyar, Ram S ^c   Auciello, Orlando ^a  

^a The University of Texas at Dallas   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^d Lake Shore Cryotronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED CARRIERS; HIGH DIELECTRIC CONSTANTS; INTERFACIAL LAYER; LOW-LEAKAGE CURRENT; MAXWELL-WAGNER RELAXATION; NANO LAYERS; NANO-DEVICES; NANO-LAMINATES;

CURRENT DENSITY; LEAKAGE CURRENTS;

ALUMINUM;

EID: 84880379600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811810     Document Type: Conference Paper

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