Si/SnSe2 multilayer films for phase change memory applications

Integrated Ferroelectrics

Volumn 140, Issue 1, 2012, Pages 1-7

  Sun, Mingcheng ^a   Hu, Yifeng ^a   Shen, Bo ^a   Zhai, Jiwei ^a   Song, Sannian ^b   Song, Zhitang ^b  

^a TONGJI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Data retention; Power consumption; Si SnSe2 multilayer films; Structure

Indexed keywords

ANNEALING TEMPERATURES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DATA RETENTION; DIFFERENT THICKNESS; LOW-ACTIVATION ENERGY; MULTILAYER STRUCTURES; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; SI LAYER;

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; ELECTRIC POWER UTILIZATION; MAGNETRON SPUTTERING; SILICON; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MULTILAYER FILMS;

EID: 84879929695     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2012.741363     Document Type: Conference Paper

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