Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster

Journal of Crystal Growth

Volumn 380, Issue , 2013, Pages 157-162

  Quinci, T ^a,b   Kuyyalil, J ^a   Thanh, T Nguyen ^a   Wang, Y Ping ^a   Almosni, S ^a   Letoublon A ^a   Rohel, T ^a   Tavernier, K ^a   Chevalier, N ^a   Dehaese, O ^a   Boudet, N ^c   Berar J F ^c   Loualiche, S ^a   Even, J ^a   Bertru, N ^a   Corre, A Le ^a   Durand, O ^a   Cornet, C ^a  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

^b INES Savoie Technolac   (France)

^c CNRS   (France)

Author keywords

A1. Crystal structure; A1. Planar defects; A1. X ray diffraction; A3. Chemical vapor deposition processes; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

ANISOTROPIC DEFECTS; CHEMICAL VAPOR DEPOSITION PROCESS; HOMOEPITAXIAL GROWTH; PLANAR DEFECT; SEMI CONDUCTING III-V MATERIALS; SILICON BUFFER LAYERS; SILICON SUBSTRATES; SYNCHROTRON X RAY DIFFRACTION;

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES; SURFACE DEFECTS; VAPORS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 84879911908     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.05.022     Document Type: Article

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