Stoichiometry control of the electronic properties of the LaAlO 3 /SrTiO3 heterointerface

Applied Physics Letters

Volumn 102, Issue 25, 2013, Pages

  Sato, H K ^a,b   Bell, C ^a   Hikita, Y ^a   Hwang, H Y ^a,c  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC BOUNDARY CONDITIONS; FILM STOICHIOMETRY; FUNCTIONAL PARAMETERS; HETERO INTERFACES; INTERFACE CONDUCTIVITY; LATTICE EXPANSION; ORDERS OF MAGNITUDE; STOICHIOMETRY CONTROL;

INTERFACES (MATERIALS); LANTHANUM ALLOYS; PULSED LASER DEPOSITION; STOICHIOMETRY; STRONTIUM TITANATES;

ELECTRONIC PROPERTIES;

EID: 84879876996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812353     Document Type: Article

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