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Volumn 113, Issue 24, 2013, Pages

Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range

(8) Levander, A X a,b Yu, K M a Novikov, S V c Liliental Weber, Z a Foxon, C T c Dubon, O D a,b Wu, J a,b Walukiewicz, W a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; COMPOSITION RANGES; CRYSTALLINE REFERENCES; DISORDER PARAMETERS; ENDPOINT COMPOUNDS; EXTENDED X-RAY ABSORPTION FINE STRUCTURES; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; SEMI-CONDUCTOR ALLOYS;

ALLOYING ELEMENTS; AMORPHOUS ALLOYS; AMORPHOUS SEMICONDUCTORS; CHEMICAL BONDS; CRYSTALLINE MATERIALS; DANGLING BONDS; ELECTRONEGATIVITY; EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY;

AMORPHOUS FILMS;

EID: 84879870208 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4812277 Document Type: Article

Times cited : (5)

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