Thermal stability of amorphous GaN1-x Asx alloys

Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

  Levander, A X ^a,b   Liliental Weber, Z ^a   Broesler, R ^a,b   Hawkridge, M E ^a   Novikov, S V ^c   Foxon, C T ^c   Dubon, O D ^a,b   Wu, J ^a,b   Walukiewicz, W ^a   Yu, K M ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ALLOY PHASE; AMORPHOUS GAN; ANNEALING CONDITION; ANNEALING TEMPERATURES; BAND EDGE; BAND GAPS; COMPOSITION RANGES; GAAS; GROWTH OF GAN; IN-PHASE; INITIAL FILM; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC APPLICATIONS; THERMAL STABILITY; TUNABILITIES;

GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE SEPARATION; THERMODYNAMIC STABILITY;

CERIUM ALLOYS;

EID: 79955388776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3581894     Document Type: Article

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