SCOPUS 정보 검색 플랫폼

Chemistry - An Asian Journal

Volumn 8, Issue 7, 2013, Pages 1514-1522

Donor-acceptor oligoimides for application in high-performance electrical memory devices

(5) Lai, Yi Cang a Kurosawa, Tadanori b Higashihara, Tomoya b Ueda, Mitsuru b Chen, Wen Chang a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

conjugation; donor acceptor systems; imides; oligomers; thin films

Indexed keywords

CONJUGATION; DONOR-ACCEPTOR SYSTEM; ELECTRICAL BEHAVIORS; HEXAFLUOROISOPROPYLIDENE; IMIDES; NEGATIVE DIFFERENTIAL RESISTANCES; STATIC RANDOM ACCESS MEMORY; WRITE-ONCE-READ-MANY;

FILM THICKNESS; NAPHTHALENE; OLIGOMERS; THIN FILMS; TIN OXIDES;

STATIC RANDOM ACCESS STORAGE;

EID: 84879464666 PISSN: 18614728 EISSN: 1861471X Source Type: Journal
DOI: 10.1002/asia.201300335 Document Type: Article

Times cited : (14)

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